BBY65...
Silicon Tuning Diode
• High Q hyperabrupt tuning diode
• Very low capacitance spread
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• For low frequency control elements
such as TCXOS and VCXOS
• High capacitance ratio and good C-V linearity
• Pb-free (RoHS compliant) package
BBY65-02V
Type
BBY65-02V
Package
SC79
Configuration
single
LS(nH)
0.6
Marking
F
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
15
V
Forward current
IF
50
mA
Operating temperature range
Top
-55 ... 150
°C
Storage temperature
Tstg
-55 ... 150
1
Value
Unit
2011-06-15
BBY65...
Electrical Characteristics at T A = 25°C, unless otherwise specified
Symbol
Parameter
Values
min.
typ.
Unit
max.
DC Characteristics
Reverse current
IR
nA
VR = 10 V
-
-
10
VR = 10 V, TA = 85 °C
-
-
100
AC Characteristics
Diode capacitance
pF
CT
VR = 0.3 V, f = 1 MHz
28.2
29.5
30.8
VR = 1 V, f = 1 MHz
-
20.25
-
VR = 2 V, f = 1 MHz
-
9.8
-
VR = 3 V, f = 1 MHz
-
4.45
-
2.6
2.7
2.8
10
10.9
-
pF
VR = 4.7 V, f = 1 MHz
Capacitance ratio
CT0.3/
VR = 0.3 V, VR = 4.7 V
CT4.7
Capacitance ratio
CT1/C T3
-
4.55
-
pF
rS
-
0.6
0.9
Ω
VR = 1 V, VR = 3 V
Series resistance
VR = 1 V, f = 470 MHz
2
2011-06-15
BBY65...
Diode capacitance CT = ƒ (VR)
f = 1MHz
40
pf
CT
30
25
20
15
10
5
0
0
1
2
3
5
V
VR
3
2011-06-15
Package SC79
4
BBY65...
2011-06-15
BBY65...
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC75 1) ) CES-Code
Month 2 0 03
2 0 04
2005
2006
2 0 07
2008
2009
2010
2011
2012
2 0 13
2014
01
a
p
A
P
a
p
A
P
a
p
A
P
02
b
q
B
Q
b
q
B
Q
b
q
B
Q
03
c
r
C
R
c
r
C
R
c
r
C
R
04
d
s
D
S
d
s
D
S
d
s
D
S
05
e
t
E
T
e
t
E
T
e
t
E
T
06
f
u
F
U
f
u
F
U
f
u
F
U
07
g
v
G
V
g
v
G
V
g
v
G
V
08
h
x
H
X
h
x
H
X
h
x
H
X
09
j
y
J
Y
j
y
J
Y
j
y
J
Y
10
k
z
K
Z
k
z
K
Z
k
z
K
Z
11
l
2
L
4
l
2
L
4
l
2
L
4
12
n
3
N
5
n
3
N
5
n
3
N
5
1) New Marking Layout for SC75, implemented at October 2005.
.
5
2011-06-15
BBY65...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ().
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
6
2011-06-15
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